DOI: 10.1051/jp3:1992248
J. Phys. III France 2 (1992) 2309-2315
An interdigital gate MOSFET for photodetection
F. Hobar1, S. Laval2, D. Pascal2 and F. Kerrour11 Institut d'Electronique, Université de Constantine, Route Ain Bey, Constantine, Algéria
2 Insitut d'Electronique Fondamentale, CNRS URA 022, Université Paris-Sud, 91405 Orsay, France
(Received 4 June 1992, accepted 8 September 1992)
Abstract
Interdigital gate Si-MOSFET have been fabricated and electrically tested. Their photodetection performances are also evaluated
and compared with straight gate ones.
© Les Editions de Physique 1992