Issue J. Phys. III France Volume 2, Number 8, August 1992 Page(s) 1421 - 1429 DOI 10.1051/jp3:1992186

DOI: 10.1051/jp3:1992186
J. Phys. III France 2 (1992) 1421-1429

Remote plasma chemical vapour deposition of silicon nitride films

S.E. Alexandrov and A. Yu. Kovalgin

Department of Electronic Materials Technology, Leningrad State University, 195 251 Leningrad, Polytechnical Street 29, Russia

(Received 1st February, accepted 17 April 1992)

Abstract
The relatively new technique of remote plasma enhanced chemical vapour deposition (RPECVD) of silicon nitride films is described. The influence of varying deposition parameters such as the ratios of reactant gases, pressure, temperature, and RF-power on the growth rate is described. Refractive index and amount of bonded hydrogen in the deposited films determined by IR attenuated total reflectance method are studied. The total concentration of bonded hydrogen in the deposited films was in the range 2 - 5 10 ²²  cm ^-3. The damage to a gateless GaAs FET after remote plasma deposition of silicon nitride films is negligible.

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