Issue J. Phys. III France Volume 5, Number 10, October 1995 Page(s) 1565 - 1572 DOI 10.1051/jp3:1995210

DOI: 10.1051/jp3:1995210
J. Phys. III France 5 (1995) 1565-1572

Excitonic Properties in GaAs Parabolic Quantum Dots

S. Jaziri and R. Bennaceur

Laboratoire de Physique de la matière condensée, faculté des sciences de Tunis, 1060 Le Belvedère Tunis, Tunisia

(Received 14 April 1995, revised 19 June 1995, accepted 11 July 1995)

Abstract
Certain classes of semiconductor quantum dots being actually fabricated exhibit a nearly parabolic confinement for both the electron and the hole. In undoped quantum dots, excitonic effects are important. In this work, first we present theoretical results on exciton properties in parabolic quantum dots: resonance energy, binding energy and oscillator strength. Then, we investigate the effects of external electric and magnetic fields on exciton in quantum dots.

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