Issue J. Phys. III France Volume 7, Number 7, July 1997 Page(s) 1389 - 1398 DOI 10.1051/jp3:1997194

DOI: 10.1051/jp3:1997194
J. Phys. III France 7 (1997) 1389-1398

Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors

H. Hedemann and W. Schröter

Universität Göttingen, IV. Physikalisches Institut, Bunsenstraße 13, 37073 Göttingen, Germany

(Received 12 November 1996, accepted 22 April 1997)

Abstract
We prove that for localized states at extended defects the high-temperature sides of deep-level transient spectra can be written as a product of an amplitude function depending on the pulse length and a shape function depending on temperature. By this property localized states can be distinguished experimentally from bandlike states. Simulations of deep level transient spectra for localized and bandlike states using the same density of states function and parameter values illustrate the differences and show the failures of conventional analysis in both cases.

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