Issue J. Phys. III France Volume 7, Number 12, December 1997 Page(s) 2293 - 2307 DOI 10.1051/jp3:1997102

DOI: 10.1051/jp3:1997102
J. Phys. III France 7 (1997) 2293-2307

Dislocation-Point Defect Interaction Effect on Local Electrical Properties of Semiconductors

E.B. Yakimov

Institute of Microelectronics Technology Russian Academy of Sciences, Chernogolovka, 142432, Russia

(Received 3 October 1996, revised 10 September 1997, accepted 16 September 1997)

Abstract
The results of investigations of dislocation effect on the Si electrical and optical properties have been reviewed. The important role of dislocation-point defect interaction in the formation of dislocation properties has been demonstrated. A short review of recent investigations of clean dislocation properties has been presented. The results of investigations of dislocation related defect spatial distribution including dislocation slip planes have been discussed. The mechanisms of dislocation electrical activity formation have been analyzed.

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