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Article cité :

Encyclopedia of Sustainability Science and Technology

Santo Martinuzzi, Abdelillah Slaoui, Jean-Paul Kleider, et al.
Encyclopedia of Sustainability Science and Technology 9196 (2012)
https://doi.org/10.1007/978-1-4419-0851-3_461

Multicrystalline silicon material: Effects of classical and rapid thermal processes

J. C. Muller and S. Martinuzzi
Journal of Materials Research 13 (10) 2721 (2011)
https://doi.org/10.1557/JMR.1998.0374

Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell properties

S. Martinuzzi, M. Gauthier, D. Barakel, et al.
The European Physical Journal Applied Physics 40 (1) 83 (2007)
https://doi.org/10.1051/epjap:2007130

Nanometer-scale metal precipitates in multicrystalline silicon solar cells

Scott A. McHugo, A. C. Thompson, A. Mohammed, et al.
Journal of Applied Physics 89 (8) 4282 (2001)
https://doi.org/10.1063/1.1330552

Mechanisms of transition-metal gettering in silicon

S. M. Myers, M. Seibt and W. Schröter
Journal of Applied Physics 88 (7) 3795 (2000)
https://doi.org/10.1063/1.1289273

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

N. M'Gafad, H. Amzil, D. Sayah, D. Ballutaud and M. Barbé
Solid-State Electronics 43 (5) 857 (1999)
https://doi.org/10.1016/S0038-1101(99)00011-8

External gettering by aluminum–silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers

S. Martinuzzi, I. Perichaud and J. J. Simon
Applied Physics Letters 70 (20) 2744 (1997)
https://doi.org/10.1063/1.119009

External self-gettering of nickel in float zone silicon wafers

N. Gay and S. Martinuzzi
Applied Physics Letters 70 (19) 2568 (1997)
https://doi.org/10.1063/1.118921

Impurity Removing at Dislocations in Float Zone Silicon by Aluminium-Silicon Alloying

I. Perichaud and S. Martinuzzi
MRS Proceedings 469 493 (1997)
https://doi.org/10.1557/PROC-469-493

Influence of phosphorus diffusion on the recombination strength of dislocations in float zone silicon wafers

J. J. Simon, I. Périchaud, N. Burle, M. Pasquinelli and S. Martinuzzi
Journal of Applied Physics 80 (9) 4921 (1996)
https://doi.org/10.1063/1.363535

Influence of extended defects and native impurities on external gettering in polycrystalline silicon

E. Ehret, V. Allais, J.-P. Vallard and A. Laugier
Materials Science and Engineering: B 34 (2-3) 210 (1995)
https://doi.org/10.1016/0921-5107(95)01275-3

High phosphorus gettering efficiency in polycrystalline silicon by optimisation of classical thermal annealing conditions

M. Loghmarti, K. Mahfoud, J. Kopp, J. C. Muller and D. Sayah
Physica Status Solidi (a) 151 (2) 379 (1995)
https://doi.org/10.1002/pssa.2211510215