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Cited article:

Amorphisation d'une cible d'AsGa par des ions As

J. Beauvillain, A. Claverie, K. Akmoum

J. Phys. III France, 2 3 (1992) 407-414

DOI: https://doi.org/10.1051/jp3:1992138

This article has been cited by the following article(s):

Lateral damage extension during masked ion implantation into GaAs

M. M. Faye, C. Vieu, G. Ben Assayag, Ph. Salles and A. Claverie
Journal of Applied Physics 80 (8) 4303 (1996)
https://doi.org/10.1063/1.363378

Relation Between Structure and Carrier Lifetime in As-Implanted GaAs

Z. Liliental-Weber, W. Swider, H. Kagiichi, et al.
MRS Proceedings 378 677 (1995)
https://doi.org/10.1557/PROC-378-677

Arsenic implantation into GaAs: a SOI technology for compound semiconductors?

Zuzanna Liliental-Weber, F. Namavar and A. Claverie
Ultramicroscopy 52 (3-4) 570 (1993)
https://doi.org/10.1016/0304-3991(93)90075-9

Semi-insulating GaAs made by As implantation and thermal annealing

A. Claverie, F. Namavar, Z. Liliental-Weber, P. Dreszer and E.R. Weber
Materials Science and Engineering: B 22 (1) 37 (1993)
https://doi.org/10.1016/0921-5107(93)90220-H

Formation of As precipitates in GaAs by ion implantation and thermal annealing

A. Claverie, Fereydoon Namavar and Z. Liliental-Weber
Applied Physics Letters 62 (11) 1271 (1993)
https://doi.org/10.1063/1.108704

Two-Dimensional Damage Distributions Induced by Localized Ion Implantations

M. M. Faye, L. Laanab, J. Beauvillain, et al.
MRS Proceedings 283 (1992)
https://doi.org/10.1557/PROC-283-783