Silicon carbide against silicon: a comparison in terms of physical properties, technology and electrical performance of power devices
J. Phys. III France, 3 6 (1993) 1101-1110
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target
Ali AMMAR, Mihai LAZAR and Bertrand VERGNERomanian Journal of Information Science and Technology 2023 (2) 193 (2023)
https://doi.org/10.59277/ROMJIST.2023.2.06
191 (2022)
https://doi.org/10.1109/CAS56377.2022.9934390
Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications
R. Anzalone, S. Privitera, M. Camarda, et al.Materials Science and Engineering: B 198 14 (2015)
https://doi.org/10.1016/j.mseb.2015.03.014
Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure
Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura and Kiyoshi YasutakeSurface and Interface Analysis 40 (6-7) 974 (2008)
https://doi.org/10.1002/sia.2814
Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma
H. Kakiuchi, H. Ohmi and K. YasutakeThin Solid Films 516 (19) 6580 (2008)
https://doi.org/10.1016/j.tsf.2007.11.031
Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition
H. Kakiuchi, H. Ohmi, M. Aketa, et al.Thin Solid Films 496 (2) 259 (2006)
https://doi.org/10.1016/j.tsf.2005.08.338
Preparation of Si–C–H thin films embedded with high oriented (100) polycrystalline silicon
Yiying Zhang, Piyi Du, Gaorong Han and Wenjian WengSurface and Coatings Technology 198 (1-3) 194 (2005)
https://doi.org/10.1016/j.surfcoat.2004.10.033
High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report)
Hiroaki KAKIUCHI, Hiromasa OHMI, Koichi NAKAZAWA, et al.Journal of the Japan Society for Precision Engineering, Contributed Papers 70 (8) 1075 (2004)
https://doi.org/10.2493/jspe.70.1075
Characterization of hydrogenated amorphous Si1 xCxfilms prepared at extremely high rates using very high frequency plasma at atmospheric pressure
Y Mori, H Kakiuchi, K Yoshii, K Yasutake and H OhmiJournal of Physics D: Applied Physics 36 (23) 3057 (2003)
https://doi.org/10.1088/0022-3727/36/23/029
Nickel film on (001) SiC: Thermally induced reactions
A Bächli, M.-A Nicolet, L Baud, C Jaussaud and R MadarMaterials Science and Engineering: B 56 (1) 11 (1998)
https://doi.org/10.1016/S0921-5107(98)00204-9
Influence of the substrate temperature on silicon–carbon thin films deposited from SiH4 and C2H4 by excimer lamp–CVD
X Redondas, P González, B León and M Pérez-AmorThin Solid Films 317 (1-2) 112 (1998)
https://doi.org/10.1016/S0040-6090(97)00601-9
Dependence on the C2H4 and SiH4 gas mixture of the Si-C film properties obtained by excimer lamp chemical vapour deposition
X. Redondas, P. González, B. León and M. Pérez-AmorSurface and Coatings Technology 100-101 160 (1998)
https://doi.org/10.1016/S0257-8972(97)00607-5
Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals
M. Pons, E. Blanquet, J.M. Dedulle, R. Madar and C. BernardMaterials Science and Engineering: B 46 (1-3) 308 (1997)
https://doi.org/10.1016/S0921-5107(96)01995-2
Photochemical vapour deposition of hydrogenated amorphous silicon-carbon thin films by using a Xe2* excimer lamp
X RedondasApplied Surface Science 106 55 (1996)
https://doi.org/10.1016/S0169-4332(96)00377-7
Effects of Postdeposition Treatments on the Mechanical Properties of a Chemical‐Vapor‐Deposited Silicon Carbide
Hongyu Wang, Raj N. Singh and Jitendra S. GoelaJournal of the American Ceramic Society 78 (9) 2437 (1995)
https://doi.org/10.1111/j.1151-2916.1995.tb08682.x
Study of SiC single-crystal sublimation growth conditions
I. Garcon, A. Rouault, M. Anikin, C. Jaussaud and R. MadarMaterials Science and Engineering: B 29 (1-3) 90 (1995)
https://doi.org/10.1016/0921-5107(94)04002-L