Low noise ohmic contacts on n and p type GaSb
J. Phys. III France, 3 9 (1993) 1825-1832
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Three-point probe 1/f noise measurement
Daner Abdula and Tilak R ThapaliyaMeasurement Science and Technology 34 (12) 125010 (2023)
https://doi.org/10.1088/1361-6501/acf063
Low frequency noise investigation of 2–3 μm GaSb-based laser diodes
Justinas Glemža, Sandra Pralgauskaitė, Vilius Palenskis and Jonas MatukasSolid-State Electronics 133 70 (2017)
https://doi.org/10.1016/j.sse.2017.05.002
Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs
Nassim Rahimi, Andrew A. Aragon, Orlando S. Romero, et al.Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (4) (2014)
https://doi.org/10.1116/1.4884948
Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb
Nassim Rahimi, Andrew A. Aragon, Orlando S. Romero, et al.APL Materials 1 (6) (2013)
https://doi.org/10.1063/1.4842355
High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide
V. P. Khvostikov, M. G. Rastegaeva, O. A. Khvostikova, et al.Semiconductors 40 (10) 1242 (2006)
https://doi.org/10.1134/S1063782606100216
A low-resistance, thermally stable Ohmic contact to n-GaSb
J. A. Robinson and S. E. MohneyJournal of Applied Physics 98 (3) (2005)
https://doi.org/10.1063/1.1989429
An improved In-based ohmic contact to n-GaSb
J.A Robinson and S.E MohneySolid-State Electronics 48 (9) 1667 (2004)
https://doi.org/10.1016/j.sse.2004.02.022
Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxy
A Vogt, A Simon, J Weber, et al.Materials Science and Engineering: B 66 (1-3) 199 (1999)
https://doi.org/10.1016/S0921-5107(99)00098-7
Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy
A. Vogt, A. Simon, H. L. Hartnagel, et al.Journal of Applied Physics 83 (12) 7715 (1998)
https://doi.org/10.1063/1.367943
Noise as a diagnostic tool for quality and reliability of electronic devices
L.K.J. VandammeIEEE Transactions on Electron Devices 41 (11) 2176 (1994)
https://doi.org/10.1109/16.333839