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Ballistic electron emission microscopy of the Au-Si (100) interface

R. Coratger, F. Ajustron, J. Beauvillain

J. Phys. III France, 3 12 (1993) 2211-2220

DOI: https://doi.org/10.1051/jp3:1993270

Citations de cet article :

Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition

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Journal of Applied Physics 113 (6) (2013)
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Electrical characteristics of metal/semiconductor nanocontacts using light emission in a scanning tunneling microscope

C. Maurel, R. Coratger, F. Ajustron, J. Beauvillain and P. Gerard
Journal of Applied Physics 94 (3) 1979 (2003)
https://doi.org/10.1063/1.1591056

Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy

A. Chahboun, R. Coratger, F. Ajustron, et al.
Journal of Applied Physics 87 (5) 2422 (2000)
https://doi.org/10.1063/1.372195

Determination of the electron mean free path in the 1–1.8 eV energy range in thin gold layers using ballistic electron emission microscopy

R. Coratger, C. Girardin, R. Pechou, F. Ajustron and J. Beauvillain
The European Physical Journal Applied Physics 5 (3) 237 (1999)
https://doi.org/10.1051/epjap:1999134

Ballistic-electron-emission spectroscopy of Au/Si and Au/GaAs interfaces: Low-temperature measurements and ballistic models

D. K. Guthrie, L. E. Harrell, G. N. Henderson, et al.
Physical Review B 54 (23) 16972 (1996)
https://doi.org/10.1103/PhysRevB.54.16972

Au/n-ZnSe contacts studied with use of ballistic-electron-emission microscopy

R. Coratger, F. Ajustron, J. Beauvillain, et al.
Physical Review B 51 (4) 2357 (1995)
https://doi.org/10.1103/PhysRevB.51.2357