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Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

Dariusz Chrobak, Michał Trębala, Artur Chrobak and Roman Nowak
Crystals 9 (12) 651 (2019)
https://doi.org/10.3390/cryst9120651

Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

Mohamed Fathi
International Journal of Photoenergy 2007 1 (2007)
https://doi.org/10.1155/2007/18298

A new detection technique of crystalline defects by sheet resistance measurement on multicrystalline silicon wafers

Mohamed Fathi and Djoudi Bouhafs
Semiconductor Science and Technology 21 (4) 437 (2006)
https://doi.org/10.1088/0268-1242/21/4/005

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

S. Maximenko, S. Soloviev, D. Cherednichenko and T. Sudarshan
Journal of Applied Physics 97 (1) 013533 (2005)
https://doi.org/10.1063/1.1828605

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

D.C. Look, C.E. Stutz, R.J. Molnar, K. Saarinen and Z. Liliental-Weber
Solid State Communications 117 (10) 571 (2001)
https://doi.org/10.1016/S0038-1098(01)00010-2

Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitates

E. Yakimov, D. Feklisova, A. Castaldini, et al.
Materials Science in Semiconductor Processing 2 (1) 69 (1999)
https://doi.org/10.1016/S1369-8001(99)00006-2

Oxygen precipitate precursors and low temperature gettering processes. I. Segregation of oxygen and thermal donor generation in the 600–850°C range

S Cadeo, S Pizzini, M Acciarri and A Cavallini
Materials Science in Semiconductor Processing 2 (1) 57 (1999)
https://doi.org/10.1016/S1369-8001(99)00005-0