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Article cité :
E.B. Yakimov
J. Phys. III France, 7 12 (1997) 2293-2307
Citations de cet article :
12 articles
Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal
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Recombination Activity of Twin Boundaries in Silicon Ribbons
Eugene B. Yakimov, Olga V. Feklisova and Sergei K. Brantov Solid State Phenomena 178-179 106 (2011) https://doi.org/10.4028/www.scientific.net/SSP.178-179.106
Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers
Mohamed Fathi International Journal of Photoenergy 2007 1 (2007) https://doi.org/10.1155/2007/18298
EBIC Investigations of Deformation Induced Defects in Si
Eugene B. Yakimov Solid State Phenomena 131-133 529 (2007) https://doi.org/10.4028/www.scientific.net/SSP.131-133.529
A new detection technique of crystalline defects by sheet resistance measurement on multicrystalline silicon wafers
Mohamed Fathi and Djoudi Bouhafs Semiconductor Science and Technology 21 (4) 437 (2006) https://doi.org/10.1088/0268-1242/21/4/005
Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current
S. Maximenko, S. Soloviev, D. Cherednichenko and T. Sudarshan Journal of Applied Physics 97 (1) 013533 (2005) https://doi.org/10.1063/1.1828605
Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
D.C. Look, C.E. Stutz, R.J. Molnar, K. Saarinen and Z. Liliental-Weber Solid State Communications 117 (10) 571 (2001) https://doi.org/10.1016/S0038-1098(01)00010-2
Interaction of gold with dislocations in silicon
B Pichaud, G Mariani-Regula and E.B Yakimov Materials Science and Engineering: B 71 (1-3) 272 (2000) https://doi.org/10.1016/S0921-5107(99)00389-X
Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitates
E. Yakimov, D. Feklisova, A. Castaldini, et al. Materials Science in Semiconductor Processing 2 (1) 69 (1999) https://doi.org/10.1016/S1369-8001(99)00006-2
Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon
O. V. Feklisova, G. Mariani-Regula, B. Pichaud and E. B. Yakimov physica status solidi (a) 171 (1) 341 (1999) https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<341::AID-PSSA341>3.0.CO;2-9
Oxygen precipitate precursors and low temperature gettering processes. I. Segregation of oxygen and thermal donor generation in the 600–850°C range
S Cadeo, S Pizzini, M Acciarri and A Cavallini Materials Science in Semiconductor Processing 2 (1) 57 (1999) https://doi.org/10.1016/S1369-8001(99)00005-0
Chemistry and Physics of Segregation of Impurities at Extended Defects in Silicon
S. Pizzini physica status solidi (a) 171 (1) 123 (1999) https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<123::AID-PSSA123>3.0.CO;2-H