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A new detection technique of crystalline defects by sheet resistance measurement on multicrystalline silicon wafers

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Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

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https://doi.org/10.1063/1.1828605

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

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Oxygen precipitate precursors and low temperature gettering processes. I. Segregation of oxygen and thermal donor generation in the 600–850°C range

S Cadeo, S Pizzini, M Acciarri and A Cavallini
Materials Science in Semiconductor Processing 2 (1) 57 (1999)
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