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Article cité :
P.K. Sitch , R. Jones , S. Öberg , M.I. Heggie
J. Phys. III France, 7 7 (1997) 1381-1387
Citations de cet article :
17 articles
Theoretical investigation on the interaction of nitrogen with dislocations in single crystal CVD diamond
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Theoretical studies on 〈100〉 dislocations in single crystal CVD diamond
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Dislocation Structures in Diamond: Density-Functional Based Modelling and High-Resolution Electron Microscopy
A.T. Blumenau, Thomas Frauenheim, Sven Öberg, B. Willems and Gustaaf Van Tendeloo Defect and Diffusion Forum 226-228 11 (2004) https://doi.org/10.4028/www.scientific.net/DDF.226-228.11
Dislocations in diamond: Dissociation into partials and their glide motion
A. Blumenau, R. Jones, T. Frauenheim, et al. Physical Review B 68 (1) 014115 (2003) https://doi.org/10.1103/PhysRevB.68.014115
Theory of hydrogen in diamond
Jonathan P Goss Journal of Physics: Condensed Matter 15 (17) R551 (2003) https://doi.org/10.1088/0953-8984/15/17/201
Thin-Film Diamond I
Eberhard Blank Semiconductors and Semimetals, Thin-Film Diamond I 76 49 (2003) https://doi.org/10.1016/S0080-8784(03)80004-2
Theory of hydrogen in diamond
J. Goss, R. Jones, M. Heggie, et al. Physical Review B 65 (11) 115207 (2002) https://doi.org/10.1103/PhysRevB.65.115207
Dislocations in diamond: Core structures and energies
A. Blumenau, M. Heggie, C. Fall, R. Jones and T. Frauenheim Physical Review B 65 (20) 205205 (2002) https://doi.org/10.1103/PhysRevB.65.205205
Industrial Applications Of Electron Microscopy
Dominique Dorignac Industrial Applications Of Electron Microscopy (2002) https://doi.org/10.1201/9780203910306.ch17
Numerical Determination of Shallow Electronic States Bound by Dislocations in Semiconductors
J.-L. Farvacque and P. Fran�ois physica status solidi (b) 223 (3) 635 (2001) https://doi.org/10.1002/1521-3951(200102)223:3<635::AID-PSSB635>3.0.CO;2-K
Free-carrier mobility in GaN in the presence of dislocation walls
J.-L. Farvacque, Z. Bougrioua and I. Moerman Physical Review B 63 (11) 115202 (2001) https://doi.org/10.1103/PhysRevB.63.115202
First Principles Studies of H in Diamond
J.P. Goss, R. Jones, M.I. Heggie, et al. physica status solidi (a) 186 (2) 263 (2001) https://doi.org/10.1002/1521-396X(200108)186:2<263::AID-PSSA263>3.0.CO;2-M
Theory of dislocations in diamond and silicon and their interaction with hydrogen
M I Heggie, S Jenkins, C P Ewels, et al. Journal of Physics: Condensed Matter 12 (49) 10263 (2000) https://doi.org/10.1088/0953-8984/12/49/327
Structure and Energy of the90°Partial Dislocation in Diamond: A CombinedAb Initioand Elasticity Theory Analysis
X. Blase, Karin Lin, A. Canning, S. G. Louie and D. C. Chrzan Physical Review Letters 84 (25) 5780 (2000) https://doi.org/10.1103/PhysRevLett.84.5780
Ultra-high resolution electron microscopy investigation of growth defects in CVD diamond films: twin interactions and fivefold twin centres
S. Delclos, D. Dorignac, F. Phillipp, F. Silva and A. Gicquel Diamond and Related Materials 9 (3-6) 346 (2000) https://doi.org/10.1016/S0925-9635(99)00195-8
Numerical determination of one-dimensional energy bands bound to dislocations
J.L Farvacque and Ph François Physica B: Condensed Matter 273-274 995 (1999) https://doi.org/10.1016/S0921-4526(99)00609-2