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Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

A. Bobby, N. Shiwakoti, P.M. Sarun, et al.
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https://doi.org/10.1016/j.cap.2015.08.020

Effect of high electronic energy deposition in semiconductors

W. Wesch, A. Kamarou and E. Wendler
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 225 (1-2) 111 (2004)
https://doi.org/10.1016/j.nimb.2004.04.188

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Materials Science and Engineering: B 86 (3) 228 (2001)
https://doi.org/10.1016/S0921-5107(01)00707-3

Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions

J. Mangeney, J. Lopez, N. Stelmakh, et al.
Applied Physics Letters 76 (1) 40 (2000)
https://doi.org/10.1063/1.125649

Damage induced in semiconductors by swift heavy ion irradiation

M. Levalois and P. Marie
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 156 (1-4) 64 (1999)
https://doi.org/10.1016/S0168-583X(99)00243-8

A comparative study of radiation damage on high resistivity silicon

P. Mangiagalli, M. Levalois, P. Marie, P. G. Rancoita and M. Rattaggi
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 146 (1-4) 296 (1998)
https://doi.org/10.1016/S0168-583X(98)00512-6