Defect generation and defect annealing upon gettering in floatzone silicon: an ONP study N. T. Bagraev, V. V. Vysotskaya, S. N. Gorin et Yu. A. SidorovJ. Phys. III France, 1 5 (1991) 733-747DOI: https://doi.org/10.1051/jp3:1991152
