High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy A. Accard, F. Brillouet, E. Duda, B. Fernier, G. Gelly, L. Goldstein, D. Leclerc et D. LesterlinJ. Phys. III France, 2 9 (1992) 1727-1738DOI: https://doi.org/10.1051/jp3:1992208
