In-situ surface technique analyses and ex-situ characterization of Si$_{1-x}$Ge$_x$ epilayers grown on Si(001)-$2 \times 1$ by molecular beam epitaxyD. Aubel, M. Diani, M. Stoehr, J. L. Bischoff, L. Kubler, D. Bolmont, B. Fraisse, R. Fourcade et D. MullerJ. Phys. III France, 4 4 (1994) 733-740DOI: https://doi.org/10.1051/jp3:1994163
