Fabrication of Buried Co-Planar Metal-Insulator-Metal Nanojunctions with a Gap Lower than 10 nmV. Rousset, C. Joachim, S. Itoua, B. Rousset et N. FabreJ. Phys. III France, 5 12 (1995) 1983-1989DOI: https://doi.org/10.1051/jp3:1995243
