Diffusion and Electrical Activation After a Rapid Thermal Annealing of an As and B-Co-Implanted Polysilicon LayerC. Gontrand, P. Sellitto, S. Tabikh, S. Latreche et A. KaminskiJ. Phys. III France, 7 1 (1997) 47-58DOI: https://doi.org/10.1051/jp3:1997109
