Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device YieldJ. Vanhellemont, S. Milita, M. Servidori, V. Higgs, G. Kissinger, E. Gramenova, E. Simoen et P. JansenJ. Phys. III France, 7 7 (1997) 1425-1433DOI: https://doi.org/10.1051/jp3:1997197
