Journal de Physique III

Defect generation and defect annealing upon gettering in floatzone silicon: an ONP study

N. T. Bagraev, V. V. Vysotskaya, S. N. Gorin and Yu. A. Sidorov

J. Phys. III France, 1 5 (1991) 733-747

DOI: 10.1051/jp3:1991152

N. T. Bagraev

V. V. Vysotskaya

S. N. Gorin

Yu. A. Sidorov

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