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Cited article:
C. Priester
J. Phys. III France, 1 4 (1991) 481-496
This article has been cited by the following article(s):
8 articles
Band discontinuities inInxGa1−xAs-InP and InP-AlyIn1−yAs heterostructures:Evidence of noncommutativity
W. Seidel, O. Krebs, P. Voisin, et al. Physical Review B 55 (4) 2274 (1997) https://doi.org/10.1103/PhysRevB.55.2274
Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect
Olivier Krebs and Paul Voisin Physical Review Letters 77 (9) 1829 (1996) https://doi.org/10.1103/PhysRevLett.77.1829
M. Luysberg, H. Sohn, A. Prasad, H. Fujioka, R. Klockenbrink and E.R. Weber 21 (1996) https://doi.org/10.1109/SIM.1996.570869
Computational materials design: A perspective for atomistic approaches
Erich Wimmer Journal of Computer-Aided Materials Design 1 (3) 215 (1994) https://doi.org/10.1007/BF00712850
Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
E. Lugagne-Delpon, J.P. André and P. Voisin Solid State Communications 86 (1) 1 (1993) https://doi.org/10.1016/0038-1098(93)90236-G
Investigations of MOCVD-grown AlInAs-InP type II heterostructures
E Lugagne-Delpon, P Voisin, J P Vieren, et al. Semiconductor Science and Technology 7 (4) 524 (1992) https://doi.org/10.1088/0268-1242/7/4/014
Optical properties of MOCVD-grown AlInAs/InP type-II superlattices
E. Lugagne-Delpon, P. Voisin, J.P. André, J.N. Patillon and M. Voos Surface Science 267 (1-3) 479 (1992) https://doi.org/10.1016/0039-6028(92)91181-A
Basic Properties of Semiconductors
PAUL VOISIN and GERALD BASTARD Basic Properties of Semiconductors 817 (1992) https://doi.org/10.1016/B978-0-444-88855-6.50023-1