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Cited article:

Band discontinuities inInxGa1−xAs-InP and InP-AlyIn1−yAs heterostructures:Evidence of noncommutativity

W. Seidel, O. Krebs, P. Voisin, et al.
Physical Review B 55 (4) 2274 (1997)
https://doi.org/10.1103/PhysRevB.55.2274

Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect

Olivier Krebs and Paul Voisin
Physical Review Letters 77 (9) 1829 (1996)
https://doi.org/10.1103/PhysRevLett.77.1829

Computational materials design: A perspective for atomistic approaches

Erich Wimmer
Journal of Computer-Aided Materials Design 1 (3) 215 (1994)
https://doi.org/10.1007/BF00712850

Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures

E. Lugagne-Delpon, J.P. André and P. Voisin
Solid State Communications 86 (1) 1 (1993)
https://doi.org/10.1016/0038-1098(93)90236-G

Investigations of MOCVD-grown AlInAs-InP type II heterostructures

E Lugagne-Delpon, P Voisin, J P Vieren, et al.
Semiconductor Science and Technology 7 (4) 524 (1992)
https://doi.org/10.1088/0268-1242/7/4/014