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Cited article:

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

P. Jeanjean, J. Sicart, J.L. Robert, F. Mollot, R. Planel

J. Phys. III France, 1 4 (1991) 503-510

DOI: https://doi.org/10.1051/jp3:1991134

This article has been cited by the following article(s):

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperatures

David Mouneyrac, John G. Hartnett, Jean-Michel Le Floch, et al.
Journal of Applied Physics 108 (10) (2010)
https://doi.org/10.1063/1.3514009