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Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy
Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, M. A. Revenko and L. V. Sokolov Journal of Applied Physics 96(12) 7665 (2004) https://doi.org/10.1063/1.1809772
Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems
M. Yu. Gutkin and A. E. Romanov Physica Status Solidi (a) 144(1) 39 (1994) https://doi.org/10.1002/pssa.2211440106
B. Chen, T. Hook, G. Starkey, A. Bhattacharyya, M. Faucher, C. Racine, C. Willets, S. Eslinger, S. Kulkarni, W. King, C. Washburn, J. Piccirillo, S. Mongeon, A. Johnson and E. Gabrielle 301 (1993) https://doi.org/10.1109/VTSA.1993.263667
T. Hook, B. Chen, G. Starkey, A. Bhattacharyya, M. Faucher, C. Racine, C. Willets, S. Eslinger, S. Kulkarni, W. King, C. Washburn, J. Piccirillo, S. Mongeon, A. Johnson and E. Gabrielle 152 (1993) https://doi.org/10.1109/ASMC.1993.682502