Dislocations as sinks for self-interstitials in gold doped silicon
J. Phys. III France, 2 3 (1992) 295-302
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Diffusion in Semiconductors
H. Bracht and N. A. StolwijkLandolt-Börnstein - Group III Condensed Matter, Diffusion in Semiconductors 33A 196 (1998)
https://doi.org/10.1007/10426818_7
Diffusion in Semiconductors
H. Bracht and N. A. StolwijkLandolt-Börnstein - Group III Condensed Matter, Diffusion in Semiconductors 33A 12 (1998)
https://doi.org/10.1007/10426818_4
Effect of oxygen aggregation processes on the recombining activity of 60° dislocations in Czochralski grown silicon
S. Acerboni, S. Pizzini, S. Binetti, M. Acciarri and B. PichaudJournal of Applied Physics 76 (5) 2703 (1994)
https://doi.org/10.1063/1.357573
Phosphorus diffusion gettering of gold in silicon: The reversibility of the gettering process
Einar Ö. Sveinbjörnsson, Olof Engström and Ulf SödervallJournal of Applied Physics 73 (11) 7311 (1993)
https://doi.org/10.1063/1.354021
Interactions of oxygen, carbon, and extended defects in silicon
S. Pizzini, S. Binetti, M. Acciarri and S. AcerboniPhysica Status Solidi (a) 138 (2) 451 (1993)
https://doi.org/10.1002/pssa.2211380213