Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

EBIC contrast study of the recombination mechanism at dislocations in GaAs

B. Sieber, J. L. Farvacque, P. Carton

J. Phys. III France, 2 3 (1992) 325-333

DOI: https://doi.org/10.1051/jp3:1992131

This article has been cited by the following article(s):

Theoretical aspects of the minority carrier recombination at dislocations in semiconductors

Jean-Louis Farvacque
Materials Science and Engineering: B 42 (1-3) 110 (1996)
https://doi.org/10.1016/S0921-5107(96)01691-1

EBIC investigation of α and β dislocations in GaAs

T. Wosinski, A. Zozime, A. Rivière and C. Vermeulin
Physica Status Solidi (a) 142 (2) 347 (1994)
https://doi.org/10.1002/pssa.2211420207

First step of degradation mechanisms in AlGaAs/GaAs laser-like structures

B. Sieber, J.L. Farvacque, J. Wang and J.W. Steeds
Materials Science and Engineering: B 20 (1-2) 29 (1993)
https://doi.org/10.1016/0921-5107(93)90390-9

Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide

B. Sieber, J. L. Farvacque and A. Miri
Physica Status Solidi (a) 138 (2) 673 (1993)
https://doi.org/10.1002/pssa.2211380238