Articles citing this article

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Cited article:

Nature et mécanisme de création des défauts induits à l'interface Si-SiO₂ par injections homogènes de porteurs à travers l'oxyde de grille

Dominique Vuillaume

J. Phys. III France, 2 6 (1992) 947-978

DOI: https://doi.org/10.1051/jp3:1992172

This article has been cited by the following article(s):

Positive charge and interface state creation at the Si-SiO2 interface during low-fluence and high-field electron injections

Abdellah Mir and Dominique Vuillaume
Applied Physics Letters 62 (10) 1125 (1993)
https://doi.org/10.1063/1.108763

Effects of high field electron injection into the gate oxide of P-channel metal–oxide–semiconductor transistors

J. M. Moragues, J. Oualid, R. Jerisian and E. Ciantar
Journal of Applied Physics 74 (8) 5078 (1993)
https://doi.org/10.1063/1.354292