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Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg₁₋ₓCdₓTe Structures
A. Jozwikowska, K. Jozwikowski, J. Antoszewski, L. Faraone and M. Suligowski IEEE Transactions on Electron Devices 1 (2018) https://doi.org/10.1109/TED.2018.2871270
Surface conductivity of InAs/GaSb superlattice infrared detectors treated with thiolated self assembled monolayers
Nathan C. Henry, Alexander Brown, Daniel B. Knorr, et al. Applied Physics Letters 108(1) 011606 (2016) https://doi.org/10.1063/1.4938168
Heavy and light hole transport in nominally undoped GaSb substrates
Hemendra Kala, Gilberto A. Umana-Membreno, Gregory Jolley, et al. Applied Physics Letters 106(3) (2015) https://doi.org/10.1063/1.4906489
Intrinsic broadening of the mobility spectrum of bulk n-type GaAs
Maximum entropy mobility spectrum analysis of HgCdTe heterostructures
Johan Rothman, Jerome Meilhan, Gwladys Perrais, Jean-Pierre Belle and Olivier Gravrand Journal of Electronic Materials 35(6) 1174 (2006) https://doi.org/10.1007/s11664-006-0238-2
Conductivity analysis of n-GaAs molecular beam epitaxial layers using multicarrier fitting
A. Wolkenberg, T. Przeslawski, J. Kaniewski, E. Kowalczyk and K. Reginski Journal of Applied Physics 99(9) (2006) https://doi.org/10.1063/1.2193160
Carrier compensation and scattering mechanisms in Si-doped InAsyP1−y layers grown on InP substrates using intermediate InAsyP1−y step-graded buffers
M. K. Hudait, Y. Lin, P. M. Sinha, J. R. Lindemuth and S. A. Ringel Journal of Applied Physics 100(6) (2006) https://doi.org/10.1063/1.2349358
Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures
A method for calculating the conductivity mobility spectrum using multi-carrier fitting
Andrzej Wolkenberg, Tomasz Przesławski, Janusz Kaniewski and Kazimierz Reginski Materials Science and Engineering: B 110(1) 79 (2004) https://doi.org/10.1016/j.mseb.2004.03.009
Reply to “Comment on ‘Mobility spectrum computational analysis using a maximum entropy approach’ ”
A matrix formulation of magnetoresistance for an arbitrary J-fold multicarrier semiconductor system via the reduced-conductivity-tensor scheme in the nonquantizing regime
Magneto-transport characterization using quantitative mobility-spectrum analysis
J. Antoszewski, D. J. Seymour, L. Faraone, J. R. Meyer and C. A. Hoffman Journal of Electronic Materials 24(9) 1255 (1995) https://doi.org/10.1007/BF02653082
Methods for magnetotransport characterization of IR detector materials