Articles citing this article

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Cited article:

Electron beam energy and Ge nanocrystal size effects on the minority carrier diffusion length measured by the nano-electron beam induced current technique

Quang-Tri Doan, Abdelillah El Hdiy and Michel Troyon
Journal of Applied Physics 110 (2) 024514 (2011)
https://doi.org/10.1063/1.3614527

Three-dimensional simulation of electron beam induced current collected by a nano-contact: Diffusion and collection analysis

Q. T. Doan, A. El Hdiy and M. Troyon
Journal of Applied Physics 110 (12) (2011)
https://doi.org/10.1063/1.3672829

Optical emission spectroscopic investigation of hydrogen plasma used for modification of electrical properties of multi-crystalline silicon

S Darwiche, M Nikravech, S Awamat, D Morvan and J Amouroux
Journal of Physics D: Applied Physics 40 (4) 1030 (2007)
https://doi.org/10.1088/0022-3727/40/4/017

Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

S. Darwiche, M. Nikravech, D. Morvan, J. Amouroux and D. Ballutaud
Solar Energy Materials and Solar Cells 91 (2-3) 195 (2007)
https://doi.org/10.1016/j.solmat.2006.08.008

EBIC technique applied to polycrystalline silicon thin films: minority carrier diffusion length improvement by hydrogenation

D. Ballutaud, A. Rivière, M. Rusu, S. Bourdais and A. Slaoui
Thin Solid Films 403-404 549 (2002)
https://doi.org/10.1016/S0040-6090(01)01652-2

Electrical properties of multicrystalline silicon produced by electromagnetic casting process: Degradation and improvement

J Boudaden, M Loghmarti, D Ballutaud, et al.
Solar Energy Materials and Solar Cells 65 (1-4) 517 (2001)
https://doi.org/10.1016/S0927-0248(00)00135-5

Effects of copper and oxygen precipitation during thermal oxidation of silicon: An electron-beam-induced current study

A. Correia, D. Ballutaud, A. Boutry-Forveille and J.-L. Maurice
Journal of Applied Physics 78 (11) 6543 (1995)
https://doi.org/10.1063/1.360475