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Cited article:

Free-carrier effects in GaAs single modulation-doped quantum well as applied to active Q-switching of injection lasers

V. S. Kalinovsky, T. V. Shubina, I. Yu. Shvechikov, A. A. Toropov

J. Phys. III France, 3 5 (1993) 1021-1032

DOI: https://doi.org/10.1051/jp3:1993179

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References

This article has been cited by the following article(s):

Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

Qiangsheng Huang, Yingchen Wu, Keqi Ma, et al.
Applied Physics Letters 108 (14) (2016)
https://doi.org/10.1063/1.4945666