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Cited article:

Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

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https://doi.org/10.59277/ROMJIST.2023.2.06

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(001) for high-power MOSFET applications

R. Anzalone, S. Privitera, M. Camarda, et al.
Materials Science and Engineering: B 198 14 (2015)
https://doi.org/10.1016/j.mseb.2015.03.014

Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure

Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura and Kiyoshi Yasutake
Surface and Interface Analysis 40 (6-7) 974 (2008)
https://doi.org/10.1002/sia.2814

Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma

H. Kakiuchi, H. Ohmi and K. Yasutake
Thin Solid Films 516 (19) 6580 (2008)
https://doi.org/10.1016/j.tsf.2007.11.031

Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

H. Kakiuchi, H. Ohmi, M. Aketa, et al.
Thin Solid Films 496 (2) 259 (2006)
https://doi.org/10.1016/j.tsf.2005.08.338

Preparation of Si–C–H thin films embedded with high oriented (100) polycrystalline silicon

Yiying Zhang, Piyi Du, Gaorong Han and Wenjian Weng
Surface and Coatings Technology 198 (1-3) 194 (2005)
https://doi.org/10.1016/j.surfcoat.2004.10.033

High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report)

Hiroaki KAKIUCHI, Hiromasa OHMI, Koichi NAKAZAWA, et al.
Journal of the Japan Society for Precision Engineering, Contributed Papers 70 (8) 1075 (2004)
https://doi.org/10.2493/jspe.70.1075

Characterization of hydrogenated amorphous Si1  xCxfilms prepared at extremely high rates using very high frequency plasma at atmospheric pressure

Y Mori, H Kakiuchi, K Yoshii, K Yasutake and H Ohmi
Journal of Physics D: Applied Physics 36 (23) 3057 (2003)
https://doi.org/10.1088/0022-3727/36/23/029

Influence of the substrate temperature on silicon–carbon thin films deposited from SiH4 and C2H4 by excimer lamp–CVD

X Redondas, P González, B León and M Pérez-Amor
Thin Solid Films 317 (1-2) 112 (1998)
https://doi.org/10.1016/S0040-6090(97)00601-9

Dependence on the C2H4 and SiH4 gas mixture of the Si-C film properties obtained by excimer lamp chemical vapour deposition

X. Redondas, P. González, B. León and M. Pérez-Amor
Surface and Coatings Technology 100-101 160 (1998)
https://doi.org/10.1016/S0257-8972(97)00607-5

Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals

M. Pons, E. Blanquet, J.M. Dedulle, R. Madar and C. Bernard
Materials Science and Engineering: B 46 (1-3) 308 (1997)
https://doi.org/10.1016/S0921-5107(96)01995-2

Effects of Postdeposition Treatments on the Mechanical Properties of a Chemical‐Vapor‐Deposited Silicon Carbide

Hongyu Wang, Raj N. Singh and Jitendra S. Goela
Journal of the American Ceramic Society 78 (9) 2437 (1995)
https://doi.org/10.1111/j.1151-2916.1995.tb08682.x