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Cited article:

Low frequency noise investigation of 2–3 μm GaSb-based laser diodes

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Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs

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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 (4) (2014)
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Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

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High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide

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A low-resistance, thermally stable Ohmic contact to n-GaSb

J. A. Robinson and S. E. Mohney
Journal of Applied Physics 98 (3) (2005)
https://doi.org/10.1063/1.1989429

Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy

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Journal of Applied Physics 83 (12) 7715 (1998)
https://doi.org/10.1063/1.367943

Noise as a diagnostic tool for quality and reliability of electronic devices

L.K.J. Vandamme
IEEE Transactions on Electron Devices 41 (11) 2176 (1994)
https://doi.org/10.1109/16.333839