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Cited article:
D. Aubel , M. Diani , M. Stoehr , J. L. Bischoff , L. Kubler , D. Bolmont , B. Fraisse , R. Fourcade , D. Muller
J. Phys. III France, 4 4 (1994) 733-740
This article has been cited by the following article(s):
6 articles
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Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes
D Dentel, L Kubler, J L Bischoff, et al. Semiconductor Science and Technology 13 (2) 214 (1998) https://doi.org/10.1088/0268-1242/13/2/010
Phonon strain-shift coefficients ofSi1−xGexgrown on Ge(001)
M. Stoehr, D. Aubel, S. Juillaguet, et al. Physical Review B 53 (11) 6923 (1996) https://doi.org/10.1103/PhysRevB.53.6923
Selected Topics in Group IV and II–VI Semiconductors
M. Diani, L. Kubler, J.L. Bischoff, et al. Selected Topics in Group IV and II–VI Semiconductors 431 (1996) https://doi.org/10.1016/B978-0-444-82411-0.50089-9
Synthesis of epitaxial Si1 − yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation
M. Diani, L. Kubler, J.L. Bischoff, et al. Journal of Crystal Growth 157 (1-4) 431 (1995) https://doi.org/10.1016/0022-0248(95)00361-4
Strong element dependence of C 1s and Si 2p X-ray photoelectron diffraction profiles for identical C and Si local geometries in β-SiC
S. Juillaguet, L. Kubler, M. Diani, et al. Surface Science 339 (3) 363 (1995) https://doi.org/10.1016/0039-6028(95)00676-1