Etude par pompage de, charge des défauts induits à l'interface Si-SiO$\mathsf{_2}$ par rayonnements ionisants
J. Phys. III France, 4 9 (1994) 1707-1721
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Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides
D. M. Fleetwood and N. S. SaksJournal of Applied Physics 79 (3) 1583 (1996)
https://doi.org/10.1063/1.361002