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Cited article:

Trap and Dislocation Electrical Activity in a Reversely Biased P-N Junction in Silicon

Bernard Leroy

J. Phys. III France, 5 9 (1995) 1307-1326

DOI: https://doi.org/10.1051/jp3:1995192

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physica status solidi (b) 222 (1) 303 (2000)
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