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Cited article:

Properties of Dislocations in HgCdTe Crystals

P.O. Renault, J.F. Barbot, P. Girault, A. Declemy, G. Rivaud, C. Blanchard

J. Phys. III France, 5 9 (1995) 1383-1389

DOI: https://doi.org/10.1051/jp3:1995198

This article has been cited by the following article(s):

Nanoscale Material Removal Mechanism of Soft-Brittle HgCdTe Single Crystals Under Nanogrinding by Ultrafine Diamond Grits

Zhenyu Zhang, Yaxing Song, Fengwei Huo and Dongming Guo
Tribology Letters 46 (1) 95 (2012)
https://doi.org/10.1007/s11249-012-9924-9

Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence

R. K. Savkina
Semiconductor physics, quantum electronics and optoelectronics 10 (3) 61 (2007)
https://doi.org/10.15407/spqeo10.03.061

Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon

M. Carmody, D. Edwall, J. Ellsworth, et al.
Journal of Electronic Materials 36 (8) 1098 (2007)
https://doi.org/10.1007/s11664-007-0182-9

The effect of high-frequency sonication on charge carrier transport in LPE and MBE HgCdTe layers

R K Savkina, A B Smirnov and F F Sizov
Semiconductor Science and Technology 22 (2) 97 (2007)
https://doi.org/10.1088/0268-1242/22/2/016

Relaxation time for ionized impurity scattering in compensated n-type Hg1-xCdxTe near x=0.2

P Girault, C Blanchard, P Grosbras and J. F Barbot
Journal of Materials Science 32 (14) 3857 (1997)
https://doi.org/10.1023/A:1018644227660