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Cited article:

Propriétés électriques d'hétérostructures a-GaAs/c-GaAs(n) et de structures de type MIS a-GaAsN/c-GaAs(n)

K. Aguir, A. Fennouh, H. Carchano, D. Lollman

J. Phys. III France, 5 10 (1995) 1573-1585

DOI: https://doi.org/10.1051/jp3:1995211

This article has been cited by the following article(s):

Handbook of Thin Films

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Handbook of Thin Films 369 (2002)
https://doi.org/10.1016/B978-012512908-4/50058-8

III–V nitride materials: an approach through amorphous GaAs1 − xNx thin films

D. Lollman, K. Aguir, J. Bandet, B. Roumiguières and H. Carchano
Materials Science and Engineering: B 43 (1-3) 283 (1997)
https://doi.org/10.1016/S0921-5107(96)01868-5

Amorphous GaAs1 − xNx thin films on crystalline Si substrates: growth and characterizations

Dave Lollman, Khalifa Aguir, Benoît Roumiguières and Hervé Carchano
Diamond and Related Materials 6 (10) 1568 (1997)
https://doi.org/10.1016/S0925-9635(97)00053-8