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This article has been cited by the following article(s):
The study of the charge collection of the normal‐collector configuration
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Application of nano-EBIC to the characterization of GaAs and InP homojunctions
Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN
A. Matoussi, T. Boufaden, S. Guermazi, B. Eljani, Y. Mlik and A. Toureille physica status solidi (b) 240(1) 160 (2003) https://doi.org/10.1002/pssb.200301870
Determination of the diffusion length and the optical self absorption coefficient using EBIC model