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Cited article:
N.N. Lebedeva , V.I. Orbukh , B.G. Salamov
J. Phys. III France, 6 6 (1996) 797-805
This article has been cited by the following article(s):
13 articles
Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution
Emrah Koç, Sema Karaköse and Bahtiyar G. Salamov physica status solidi (a) 210 (9) 1806 (2013) https://doi.org/10.1002/pssa.201228767
Influence of the microstructure on the charge transport in semiconductor gas discharge electronic devices
Y. Sadiq, K. Aktas, S. Acar and B.G Salamov Superlattices and Microstructures 47 (6) 648 (2010) https://doi.org/10.1016/j.spmi.2010.03.005
Townsend-like discharge: the suppression of instabilities by a semiconductor electrode
L M Portsel, A N Lodygin and Yu A Astrov Journal of Physics D: Applied Physics 42 (23) 235208 (2009) https://doi.org/10.1088/0022-3727/42/23/235208
Stability and current behaviour in semiconductor gas discharge electronic devices
Y Sadiq, M Özer and B G Salamov Journal of Physics D: Applied Physics 41 (4) 045204 (2008) https://doi.org/10.1088/0022-3727/41/4/045204
Memory effect in semiconductor gas discharge electronic devices
Y Sadiq, H (Yücel) Kurt and B G Salamov Journal of Physics D: Applied Physics 41 (22) 225204 (2008) https://doi.org/10.1088/0022-3727/41/22/225204
Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector
H. Yűcel Kurt and B.G. Salamov Acta Physica Polonica A 114 (4) 819 (2008) https://doi.org/10.12693/APhysPolA.114.819
Formation of low resistance gas state near the surface of semiconductor electrode in pre-breakdown regime
B G Salamov, N N Lebedeva, H Y Kurt, V I Orbukh and E Yu Bobrova Journal of Physics D: Applied Physics 39 (13) 2732 (2006) https://doi.org/10.1088/0022-3727/39/13/016
Analysis of prebreakdown current in a gas discharge system with a semiconducting cathode
B G Salamov and R Kasap Journal of Physics D: Applied Physics 39 (2) 301 (2006) https://doi.org/10.1088/0022-3727/39/2/010
A Large Emitting Area UV Light Source With Semiconductor Cathode
B.G. Salamov, Y. OztekinCiftci and K. Colakoglu IEEE Transactions on Plasma Science 32 (5) 2093 (2004) https://doi.org/10.1109/TPS.2004.835524
Behaviour of light emission in a semiconductor gas discharge IR image converter
B G Salamov Journal of Physics D: Applied Physics 37 (18) 2496 (2004) https://doi.org/10.1088/0022-3727/37/18/005
A microgap surge absorber fabricated using conventional semiconductor technology
Li Hong and Ruan Hang-yu Journal of Zhejiang University-SCIENCE A 2 (2) 174 (2001) https://doi.org/10.1631/jzus.2001.0174
Electrical characterisations of new microgap surge absorber fabricated by using conventional semiconductor technology
H. Li and H.-Z. Wu IEE Proceedings - Circuits, Devices and Systems 148 (3) 171 (2001) https://doi.org/10.1049/ip-cds:20010248
Spatial stabilization of Townsend discharge in a modified ionization cell with symmetrical short gaps between semiconductor plate and electrodes
B G Salamov, B G Akinoglu and N N Lebedeva Journal of Physics D: Applied Physics 32 (16) 2068 (1999) https://doi.org/10.1088/0022-3727/32/16/316