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Cited article:

Préparation et caractérisation de couches minces d'oxynitrure de phosphore destinées à la passivation d'InP

H. Hbib, O. Bonnaud, A. Quemerais, M. Gauneau, J. L. Adam, R. Marchand

J. Phys. III France, 6 11 (1996) 1489-1506

DOI: https://doi.org/10.1051/jp3:1996198

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References

This article has been cited by the following article(s):

Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature

H Hbib, O Bonnaud and B Fortin
Semiconductor Science and Technology 12 (5) 609 (1997)
https://doi.org/10.1088/0268-1242/12/5/015