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Cited article:

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

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Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors

Nakibinge Tawfiq Kimbugwe and Ercan Yilmaz
Journal of Materials Science: Materials in Electronics 31 (15) 12372 (2020)
https://doi.org/10.1007/s10854-020-03783-z

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

Xuejiao Gao, Ilia Kolevatov, Kaixiang Chen, et al.
ACS Applied Electronic Materials 2 (1) 268 (2020)
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Passivation of silicon substrate using two-step grown ternary aluminium doped zirconium oxide

Hock Jin Quah, Zainuriah Hassan and Way Foong Lim
Applied Surface Science 493 411 (2019)
https://doi.org/10.1016/j.apsusc.2019.07.023

Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material

D. Tsoukalas, C. Tsamis and P. Normand
Journal of Applied Physics 89 (12) 7809 (2001)
https://doi.org/10.1063/1.1371003

Comment on “A model of hole trapping in SiO[sub 2] films on silicon” [J. Appl. Phys. 81, 6822 (1997)]

R. A. B. Devine, W. L. Warren and S. Karna
Journal of Applied Physics 83 (10) 5591 (1998)
https://doi.org/10.1063/1.367498

A study of the radiation sensitivity of non-crystalline SiO/sub 2/ films using spectroscopic ellipsometry

B.J. Mrstik, P.J. McMarr, R.K. Lawrence and H.L. Hughes
IEEE Transactions on Nuclear Science 45 (6) 2450 (1998)
https://doi.org/10.1109/23.736485