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Cited article:
R.A.B. Devine
J. Phys. III France, 6 12 (1996) 1569-1594
This article has been cited by the following article(s):
9 articles
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Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors
Nakibinge Tawfiq Kimbugwe and Ercan Yilmaz Journal of Materials Science: Materials in Electronics 31 (15) 12372 (2020) https://doi.org/10.1007/s10854-020-03783-z
Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers
Xuejiao Gao, Ilia Kolevatov, Kaixiang Chen, et al. ACS Applied Electronic Materials 2 (1) 268 (2020) https://doi.org/10.1021/acsaelm.9b00748
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Permanent electric dipoles on gas-suspended particles and the production of filamentary aggregates
John Abrahamson and John Marshall Journal of Electrostatics 55 (1) 43 (2002) https://doi.org/10.1016/S0304-3886(01)00183-8
Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material
D. Tsoukalas, C. Tsamis and P. Normand Journal of Applied Physics 89 (12) 7809 (2001) https://doi.org/10.1063/1.1371003
Wiley Encyclopedia of Electrical and Electronics Engineering
B. Lojek Wiley Encyclopedia of Electrical and Electronics Engineering (1999) https://doi.org/10.1002/047134608X.W7005
Comment on “A model of hole trapping in SiO[sub 2] films on silicon” [J. Appl. Phys. 81, 6822 (1997)]
R. A. B. Devine, W. L. Warren and S. Karna Journal of Applied Physics 83 (10) 5591 (1998) https://doi.org/10.1063/1.367498
A study of the radiation sensitivity of non-crystalline SiO/sub 2/ films using spectroscopic ellipsometry
B.J. Mrstik, P.J. McMarr, R.K. Lawrence and H.L. Hughes IEEE Transactions on Nuclear Science 45 (6) 2450 (1998) https://doi.org/10.1109/23.736485