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Cited article:

Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics

S. Islam, A. S. Senarath, E. Farzana, D. R. Ball, A. Sengupta, N. S. Hendricks, A. Bhattacharyya, R. A. Reed, E. X. Zhang, J. S. Speck, D. M. Fleetwood and R. D. Schrimpf
IEEE Transactions on Nuclear Science 71 (4) 515 (2024)
https://doi.org/10.1109/TNS.2024.3370190

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Zhiyu Xu, Theeradetch Detchprohm, Shyh-Chiang Shen, A. Nepomuk Otte and Russell D. Dupuis
IEEE Transactions on Electron Devices 71 (6) 3761 (2024)
https://doi.org/10.1109/TED.2024.3393932

Effect of overlap region for schottky metal and field oxide on the electrical characteristics of 6500 V/50A 4H-SiC JBS diodes

Xiping Niu, Ling Sang, Yunlai An, et al.
Journal of Crystal Growth 603 127009 (2023)
https://doi.org/10.1016/j.jcrysgro.2022.127009

Design rules for field plate edge termination in SiC Schottky diodes

M.C. Tarplee, V.P. Madangarli, Quinchun Zhang and T.S. Sudarshan
IEEE Transactions on Electron Devices 48 (12) 2659 (2001)
https://doi.org/10.1109/16.974686