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Cited article:

Metal-n-InP Rectifying Properties Enhancement with Zn Based Metallizations and Diffusion at Moderate Annealing Temperatures

F. Barbarin, C. Guillot, J. Achard, M. Dugay, B. Lauron, D.Z. Kim

J. Phys. III France, 7 7 (1997) 1523-1535

DOI: https://doi.org/10.1051/jp3:1997205

This article has been cited by the following article(s):

Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodes

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Gas sensing properties of pseudo-Schottky diodes on p-type indium phosphide substrates

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Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics

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Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well

C. Guillot, J. Achard, F. Barbarin and M. Dugay
Journal of Electronic Materials 28 (8) 975 (1999)
https://doi.org/10.1007/s11664-999-0207-7