Swift Heavy Ion Induced Defect Study in Epitaxial n-Type CaAs from ${\it In}$ ${\it Situ}$ Hall Effect Measurements
J. Phys. III France, 7 8 (1997) 1661-1676
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs
A. Debelle, G. Gutierrez, A. Boulle, I. Monnet and L. ThoméJournal of Applied Physics 132 (8) (2022)
https://doi.org/10.1063/5.0096764
Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements
Shramana Mishra, Budhi Singh, Sayantan Bhattacharya, et al.Journal of Raman Spectroscopy 47 (8) 963 (2016)
https://doi.org/10.1002/jrs.4916
Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode
A. Bobby, N. Shiwakoti, P.M. Sarun, et al.Current Applied Physics 15 (11) 1500 (2015)
https://doi.org/10.1016/j.cap.2015.08.020
THz Photoconductive Antennas Made From Ion-Bombarded Semiconductors
J. MangeneyJournal of Infrared, Millimeter, and Terahertz Waves 33 (4) 455 (2012)
https://doi.org/10.1007/s10762-011-9848-8
Effect of high electronic energy deposition in semiconductors
W. Wesch, A. Kamarou and E. WendlerNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 225 (1-2) 111 (2004)
https://doi.org/10.1016/j.nimb.2004.04.188
In situ resistivity studies of 200MeV 107Ag14+-ion irradiated n-GaAs epitaxial layers
R. Singh, S.K. Arora, J.P. Singh, et al.Vacuum 65 (1) 39 (2002)
https://doi.org/10.1016/S0042-207X(01)00399-2
Non-linear characteristics of irradiation damages in silicon by MeV Si clusters
Ding-Yu Shen, Dong-Xing Jiang, Xi-Ting Lu, et al.Applied Surface Science 199 (1-4) 123 (2002)
https://doi.org/10.1016/S0169-4332(02)00615-3
Defect creation kinetics in swift heavy ions, protons and electrons irradiated germanium
A. Colder, M. Levalois and P. MarieThe European Physical Journal Applied Physics 13 (2) 89 (2001)
https://doi.org/10.1051/epjap:2001117
Experimental investigation of 200 MeV 107Ag14+ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements
R. Singh, S.K. Arora, J.P. Singh, et al.Materials Science and Engineering: B 86 (3) 228 (2001)
https://doi.org/10.1016/S0921-5107(01)00707-3
Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions
J. Mangeney, J. Lopez, N. Stelmakh, et al.Applied Physics Letters 76 (1) 40 (2000)
https://doi.org/10.1063/1.125649
Damage induced in semiconductors by swift heavy ion irradiation
M. Levalois and P. MarieNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 156 (1-4) 64 (1999)
https://doi.org/10.1016/S0168-583X(99)00243-8
A comparative study of radiation damage on high resistivity silicon
P. Mangiagalli, M. Levalois, P. Marie, P. G. Rancoita and M. RattaggiThe European Physical Journal Applied Physics 6 (2) 121 (1999)
https://doi.org/10.1051/epjap:1999161
Latent tracks formation in silicon single crystals irradiated with fullerenes in the electronic regime
B. Canut, N. Bonardi, S.M.M. Ramos and S. Della-NegraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 146 (1-4) 296 (1998)
https://doi.org/10.1016/S0168-583X(98)00512-6