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Cited article:

A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

M.A. González, O. Martínez, J. Jiménez, C. Frigeri and J.L. Weyher
Journal of Electronic Materials 39 (6) 781 (2010)
https://doi.org/10.1007/s11664-010-1108-5

Revealing of defects in CdTe crystals by DSL etching

F. Bissoli, J. L. Weyher, A. Zappettini, M. Zha and L. Zanotti
Crystal Research and Technology 40 (10-11) 1060 (2005)
https://doi.org/10.1002/crat.200410486

Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes

S. Maximenko, S. Soloviev, D. Cherednichenko and T. Sudarshan
Applied Physics Letters 84 (9) 1576 (2004)
https://doi.org/10.1063/1.1652229

Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

A.M. Ardila, O. Martı́nez, L.F. Sanz, et al.
Materials Science and Engineering: B 91-92 70 (2002)
https://doi.org/10.1016/S0921-5107(01)00974-6

Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

J. L. Weyher, F. D. Tichelaar, H. W. Zandbergen, L. Macht and P. R. Hageman
Journal of Applied Physics 90 (12) 6105 (2001)
https://doi.org/10.1063/1.1416137