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Cited article:

Diode ideality factor for MOSFETs characterization of dose effect

E. Bendada, M. De La Bardonnie, P. Mialhe and J.-P. Charles
Radiation Effects and Defects in Solids 138 (1-2) 39 (1996)
https://doi.org/10.1080/10420159608211507

Electrical Characterization of Silicon-on-Insulator Materials and Devices

Sorin Cristoloveanu and Sheng S. Li
Electrical Characterization of Silicon-on-Insulator Materials and Devices 185 (1995)
https://doi.org/10.1007/978-1-4615-2245-4_7

Surface potential determination in metal‐oxide‐semiconductor capacitors

J. M. Moragues, E. Ciantar, R. Jérisian, B. Sagnes and J. Oualid
Journal of Applied Physics 76 (9) 5278 (1994)
https://doi.org/10.1063/1.357178

Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

K. Seghir, S. Cristoloveanu, R. Jerisian, J. Oualid and A.-J. Auberton-Herve
IEEE Transactions on Electron Devices 40 (6) 1104 (1993)
https://doi.org/10.1109/16.214736

Two‐dimensional modelling and characterization of gate‐to‐drain overlap contribution on the leakage current of a MOSFET, used as a GCD

E. Ciantar, S. Burgniard, R. Jérisian and J. Oualid
Quality and Reliability Engineering International 9 (4) 337 (1993)
https://doi.org/10.1002/qre.4680090417

Effects of high field electron injection into the gate oxide of P-channel metal–oxide–semiconductor transistors

J. M. Moragues, J. Oualid, R. Jerisian and E. Ciantar
Journal of Applied Physics 74 (8) 5078 (1993)
https://doi.org/10.1063/1.354292