Mechanical Properties and Dislocation Dynamics in III-V Compounds
J. Phys. III France, 7 7 (1997) 1435-1450
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
GaAs Solar Cells Grown Directly on V-Groove Si Substrates
Theresa E. Saenz, Jacob Boyer, John S. Mangum, Anica N. Neumann, Jennifer Selvidge, Sarah A. Collins, Michelle S. Young, Steven W. Johnston, Myles A. Steiner, Ryan M. France, William E. McMahon, Jeramy D. Zimmerman and Emily L. WarrenACS Applied Materials & Interfaces 17 (1) 1341 (2025)
https://doi.org/10.1021/acsami.4c18928
7 (2025)
https://doi.org/10.1117/12.3043449
Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP
Ludovic Largeau, Gilles Patriarche, Eric Le Bourhis and Jean-Pierre RivièreInternational Journal of Materials Research 97 (9) 1230 (2022)
https://doi.org/10.1515/ijmr-2006-0194
Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density
Ryan D. Hool, Yukun Sun, Brian D. Li, et al.Journal of Applied Physics 130 (24) (2021)
https://doi.org/10.1063/5.0073525
Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices
Jacob T. Boyer, Ari N. Blumer, Zak H. Blumer, Daniel L. Lepkowski and Tyler J. GrassmanCrystal Growth & Design 20 (10) 6939 (2020)
https://doi.org/10.1021/acs.cgd.0c00992
Atomic structures and dynamic properties of dislocations in semiconductors: current progress and stagnation
Ichiro YonenagaSemiconductor Science and Technology 35 (4) 043001 (2020)
https://doi.org/10.1088/1361-6641/ab675e
1680 (2020)
https://doi.org/10.1109/PVSC45281.2020.9300803
Standing wave effect and fractal structure in dislocation evolution
P. Li and Z. F. ZhangScientific Reports 7 (1) (2017)
https://doi.org/10.1038/s41598-017-04257-9
The plasticity of indium antimonide: Insights from variable temperature, strain rate jump micro-compression testing
J.M. Wheeler, L. Thilly, A. Morel, et al.Acta Materialia 106 283 (2016)
https://doi.org/10.1016/j.actamat.2015.12.036
Constitutive Relations for Modeling Single Crystal GaN at Elevated Temperatures
Antoinette Maniatty and Payman KarvaniJournal of Engineering Materials and Technology 137 (1) (2015)
https://doi.org/10.1115/1.4028441
Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures
Santino D. Carnevale, Julia I. Deitz, John A. Carlin, et al.IEEE Journal of Photovoltaics 5 (2) 676 (2015)
https://doi.org/10.1109/JPHOTOV.2014.2379111
Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging
Santino D. Carnevale, Julia I. Deitz, John A. Carlin, et al.Applied Physics Letters 104 (23) (2014)
https://doi.org/10.1063/1.4883371
Dislocation dynamics in SiGe alloys
I YonenagaJournal of Physics: Conference Series 471 012002 (2013)
https://doi.org/10.1088/1742-6596/471/1/012002
The influence of atomic ordering on strain relaxation during the growth of metamorphic solar cells
A G Norman, R M France, W E McMahon, J F Geisz and M J RomeroJournal of Physics: Conference Series 471 012006 (2013)
https://doi.org/10.1088/1742-6596/471/1/012006
000918 (2012)
https://doi.org/10.1109/PVSC.2012.6317752
003375 (2011)
https://doi.org/10.1109/PVSC.2011.6186671
Brittle‐to‐ductile transition temperature in InP
Leonardus B. Bayu‐Aji and P. Pirouzphysica status solidi (a) 207 (5) 1190 (2010)
https://doi.org/10.1002/pssa.200925347
Indentation of Ceramics, Some Highlights
Eric Le BourhisMaterials Science Forum 662 77 (2010)
https://doi.org/10.4028/www.scientific.net/MSF.662.77
Structure of annealed nanoindentations in n- and p-doped (001)GaAs
E. Le Bourhis and G. PatriarcheJournal of Applied Physics 106 (12) (2009)
https://doi.org/10.1063/1.3270420
High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
I. Yonenaga, H. Koizumi, Y. Ohno and T. TaishiJournal of Applied Physics 103 (9) (2008)
https://doi.org/10.1063/1.2908193
Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE
Ł. Gelczuk, J. Serafińczuk, M. Dąbrowska-Szata and P. DłużewskiJournal of Crystal Growth 310 (12) 3014 (2008)
https://doi.org/10.1016/j.jcrysgro.2008.03.003
Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction
Artem Shalimov, Jadwiga Bąk-Misiuk, Vladimir M. Kaganer, Maria Calamiotou and Alexandros GeorgakilasJournal of Applied Physics 101 (1) (2007)
https://doi.org/10.1063/1.2407260
Dislocation‐related electronic states in partially strain‐relaxed InGaAs/GaAs heterostructures grown by MOVPE
Ł. Gelczuk, M. Dąbrowska‐Szata, G. Jóźwiak, et al.physica status solidi c 4 (8) 3037 (2007)
https://doi.org/10.1002/pssc.200675467
Mechanical properties of undoped GaAs. Part I: Yield stress measurements
Shanling Wang and Pirouz PirouzActa Materialia 55 (16) 5500 (2007)
https://doi.org/10.1016/j.actamat.2007.06.008
Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
Ł. Gelczuk, M. Dąbrowska-Szata, G. Jóźwiak and D. RadziewiczPhysica B: Condensed Matter 388 (1-2) 195 (2007)
https://doi.org/10.1016/j.physb.2006.05.426
DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE
Łukasz Gelczuk, Grzegorz Jóźwiak, Marcin Motyka and Maria Dąbrowska-SzataSolid State Phenomena 131-133 485 (2007)
https://doi.org/10.4028/www.scientific.net/SSP.131-133.485
Mobile dislocation density and strain relaxation rate evolution during InxGa1−xAs∕GaAs heteroepitaxy
C. Lynch, E. Chason and R. BeresfordJournal of Applied Physics 100 (1) (2006)
https://doi.org/10.1063/1.2206125
Yield strength and dislocation mobility in plastically deformed ZnSe
I. Yonenaga, K. Watanabe, S. Itoh, S. Fujiwara and K. YoshinoPhysica B: Condensed Matter 376-377 771 (2006)
https://doi.org/10.1016/j.physb.2005.12.193
Encyclopedia of Materials: Science and Technology
A. Couret and D. CaillardEncyclopedia of Materials: Science and Technology 1 (2006)
https://doi.org/10.1016/B0-08-043152-6/02062-3
Dynamics and characters of dislocations in ZnSe
I. Yonenaga, K. Watanabe, S. Itoh and S. FujiwaraJournal of Materials Science 41 (9) 2601 (2006)
https://doi.org/10.1007/s10853-006-7817-8
Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures
G Patriarche, L Largeau, J P Rivière and E Le BourhisJournal of Physics D: Applied Physics 38 (8) 1140 (2005)
https://doi.org/10.1088/0022-3727/38/8/007
Dislocation multiplication rate in the early stage of germanium plasticity
Jan Fikar, Corinne Dupas, Tomas Kruml, Alain Jacques and Jean-Luc MartinMaterials Science and Engineering: A 400-401 431 (2005)
https://doi.org/10.1016/j.msea.2005.03.075
Conservative indentation flow throughout thin (011) InP foils
L. Largeau, G. Patriarche, E. Le Bourhis and J. P. RiviereJournal of Materials Science 40 (14) 3809 (2005)
https://doi.org/10.1007/s10853-005-2548-9
Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors
Ichiro YonenagaMATERIALS TRANSACTIONS 46 (9) 1979 (2005)
https://doi.org/10.2320/matertrans.46.1979
Polarity-induced changes in the nanoindentation response of GaAs
E. Le Bourhis, G. Patriarche, L. Largeau and J.P. RivièreJournal of Materials Research 19 (01) 131 (2004)
https://doi.org/10.1557/jmr.2004.0015
Polarity-induced changes in the nanoindentation response of GaAs
E. Le Bourhis, G. Patriarche, L. Largeau and J.P. RivièreJournal of Materials Research 19 (1) 131 (2004)
https://doi.org/10.1557/jmr.2004.19.1.131
Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy
R. Beresford, C. Lynch and E. ChasonJournal of Crystal Growth 251 (1-4) 106 (2003)
https://doi.org/10.1016/S0022-0248(02)02376-X
Dislocation mobility and photoluminescence of plastically deformed GaN
I. Yonenaga, S. Itoh and T. GotoPhysica B: Condensed Matter 340-342 484 (2003)
https://doi.org/10.1016/j.physb.2003.09.040
Thermally Activated Mechanisms in Crystal Plasticity
Pergamon Materials Series, Thermally Activated Mechanisms in Crystal Plasticity 8 227 (2003)https://doi.org/10.1016/S1470-1804(03)80037-8
Plastic deformation of III–V semiconductorsunder concentrated load
E. Le Bourhis and G. PatriarcheProgress in Crystal Growth and Characterization of Materials 47 (1) 1 (2003)
https://doi.org/10.1016/j.pcrysgrow.2004.09.001
Modelling of plastic behaviour of compound semiconductors; from simple glide to multiglide
R Lohonka, G Vanderschaeve and J Kratochv lJournal of Physics: Condensed Matter 14 (48) 12975 (2002)
https://doi.org/10.1088/0953-8984/14/48/340
Modelling of the plastic behaviour of III–V compound semiconductors during compressive tests
R. Lohonka, G. Vanderschaeve and J. Kratochvı́lMaterials Science and Engineering: A 337 (1-2) 50 (2002)
https://doi.org/10.1016/S0921-5093(02)00038-2
High-temperature strength of III V nitride crystals
I YonenagaJournal of Physics: Condensed Matter 14 (48) 12947 (2002)
https://doi.org/10.1088/0953-8984/14/48/336
Dislocation mobility and electronic effects in semiconductor compounds
G. Vanderschaeve, C. Levade and D. CaillardJournal of Microscopy 203 (1) 72 (2001)
https://doi.org/10.1046/j.1365-2818.2001.00901.x
Yielding and flow behavior of Mo5Si3 single crystals
K Yoshimi, M.H Yoo, A.A Wereszczak, et al.Scripta Materialia 45 (11) 1321 (2001)
https://doi.org/10.1016/S1359-6462(01)01170-8
TEM Study of strain states in III-V semiconductor epitaxial layers.
André ROCHER, Anne PONCHET, Stéphanie BLANC and Chantal FONTAINEMRS Proceedings 673 P5.5 (2001)
https://doi.org/10.1557/PROC-673-P5.5
Yield strength and dislocation mobility in plastically deformed bulk single-crystal GaN
Ichiro Yonenaga and Kensaku MotokiJournal of Applied Physics 90 (12) 6539 (2001)
https://doi.org/10.1063/1.1415754
Deformations induced by a Vickers indentor in InP at room temperature
E. Le Bourhis and G. PatriarcheThe European Physical Journal Applied Physics 12 (1) 31 (2000)
https://doi.org/10.1051/epjap:2000168
Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy
André Rocher and Etienne SnoeckMaterials Science and Engineering: B 67 (1-2) 62 (1999)
https://doi.org/10.1016/S0921-5107(99)00210-X
Electronically induced dislocation glide motion in hexagonal GaN single crystals
Koji Maeda, Kunio Suzuki, Masaki Ichihara, et al.Physica B: Condensed Matter 273-274 134 (1999)
https://doi.org/10.1016/S0921-4526(99)00424-X
Plasticity of III—V Compounds at Low Temperatures
T. Suzuki, T. Yasutomi, T. Tokuoka and I. Yonenagaphysica status solidi (a) 171 (1) 47 (1999)
https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<47::AID-PSSA47>3.0.CO;2-X
Climb of dislocations in GaAs by irradiation
I. Yonenaga, P.D. Brown and C.J. HumphreysMaterials Science and Engineering: A 253 (1-2) 148 (1998)
https://doi.org/10.1016/S0921-5093(98)00723-0
Plastic homology of tetrabonded crystals
H.O.K. Kirchner and T. SuzukiActa Materialia 46 (1) 305 (1998)
https://doi.org/10.1016/S1359-6454(97)00150-X
Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs
S.-H. Lim, D. Shindo, I. Yonenaga, P. D. Brown and C. J. HumphreysPhysical Review Letters 81 (24) 5350 (1998)
https://doi.org/10.1103/PhysRevLett.81.5350