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Cited article:
I. Yonenaga
J. Phys. III France, 7 7 (1997) 1435-1450
This article has been cited by the following article(s):
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Climb of dislocations in GaAs by irradiation
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Yielding and flow behavior of Mo5Si3 single crystals
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Polarity-induced changes in the nanoindentation response of GaAs
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I Yonenaga
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High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
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Yield strength and dislocation mobility in plastically deformed ZnSe
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Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs
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DOI: 10.1103/PhysRevLett.81.5350
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Dynamics and characters of dislocations in ZnSe
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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy
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Plasticity of III—V Compounds at Low Temperatures
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