Journal de Physique III

High frequency analysis of fast devices using small-signal Monte Carlo simulations : application to a 0.1 μm-gate MODFET

P. Dollfus, S. Galdin, C. Brisset and P. Hesto

J. Phys. III France, 3 9 (1993) 1713-1718

DOI: 10.1051/jp3:1993231

P. Dollfus

S. Galdin

C. Brisset

P. Hesto

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