Journal de Physique III

Diffusion and Electrical Activation After a Rapid Thermal Annealing of an As and B-Co-Implanted Polysilicon Layer

C. Gontrand, P. Sellitto, S. Tabikh, S. Latreche and A. Kaminski

J. Phys. III France, 7 1 (1997) 47-58

DOI: 10.1051/jp3:1997109

C. Gontrand

P. Sellitto

S. Tabikh

S. Latreche

A. Kaminski

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