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Diode ideality factor for MOSFETs characterization of dose effect

E. Bendada, M. De La Bardonnie, P. Mialhe and J.-P. Charles
Radiation Effects and Defects in Solids 138 (1-2) 39 (1996)
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Electrical Characterization of Silicon-on-Insulator Materials and Devices

Sorin Cristoloveanu and Sheng S. Li
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Surface potential determination in metal‐oxide‐semiconductor capacitors

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IEEE Transactions on Electron Devices 40 (6) 1104 (1993)
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Two‐dimensional modelling and characterization of gate‐to‐drain overlap contribution on the leakage current of a MOSFET, used as a GCD

E. Ciantar, S. Burgniard, R. Jérisian and J. Oualid
Quality and Reliability Engineering International 9 (4) 337 (1993)
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Effects of high field electron injection into the gate oxide of P-channel metal–oxide–semiconductor transistors

J. M. Moragues, J. Oualid, R. Jerisian and E. Ciantar
Journal of Applied Physics 74 (8) 5078 (1993)
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