Analysis of the electrical conduction using an iterative method
J. Phys. III France, 2 1 (1992) 99-110
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe
I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii and A. G. KorotaevJournal of Applied Physics 132 (15) (2022)
https://doi.org/10.1063/5.0097418
Mixed conductivity analysis of single crystals of α‴-(Cd1−x Znx)3As2 (x = 0.45)
V. S. Zakhvalinskii, T. B. Nikulicheva, A. V. Kochura, et al.AIP Advances 11 (3) (2021)
https://doi.org/10.1063/5.0038477
New techniques for mobility spectrum analysis
W. A. BeckJournal of Applied Physics 129 (16) (2021)
https://doi.org/10.1063/5.0040540
Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg₁₋ₓCdₓTe Structures
A. Jozwikowska, K. Jozwikowski, J. Antoszewski, L. Faraone and M. SuligowskiIEEE Transactions on Electron Devices 1 (2018)
https://doi.org/10.1109/TED.2018.2871270
On the pitfalls of applying isotropic mobility spectrum analysis to conductors with weak anisotropy
K. S. Stephenson and Ya. B. BazaliyJournal of Applied Physics 124 (12) (2018)
https://doi.org/10.1063/1.5048579
Temperature dynamics of the electronic structure in dilute Bi-Sn alloys
A. S. Fedotov, V. G. Shepelevich, I. A. Svito and V. A. SivakovPhysical Review B 97 (7) (2018)
https://doi.org/10.1103/PhysRevB.97.075204
Surface conductivity of InAs/GaSb superlattice infrared detectors treated with thiolated self assembled monolayers
Nathan C. Henry, Alexander Brown, Daniel B. Knorr, et al.Applied Physics Letters 108 (1) 011606 (2016)
https://doi.org/10.1063/1.4938168
Heavy and light hole transport in nominally undoped GaSb substrates
Hemendra Kala, Gilberto A. Umana-Membreno, Gregory Jolley, et al.Applied Physics Letters 106 (3) (2015)
https://doi.org/10.1063/1.4906489
Intrinsic broadening of the mobility spectrum of bulk n-type GaAs
G Jolley, G A Umana-Membreno, N D Akhavan, et al.New Journal of Physics 16 (11) 113033 (2014)
https://doi.org/10.1088/1367-2630/16/11/113033
105 (2014)
https://doi.org/10.1109/COMMAD.2014.7038663
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Andrzej WolkenbergJournal of Materials 2013 1 (2013)
https://doi.org/10.1155/2013/260982
Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures
G. A. Umana-Membreno, T. B. Fehlberg, S. Kolluri, et al.Applied Physics Letters 98 (22) (2011)
https://doi.org/10.1063/1.3595341
Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates
G.A. Umana-Membreno, T.B. Fehlberg, S. Kolluri, et al.Microelectronic Engineering 88 (7) 1079 (2011)
https://doi.org/10.1016/j.mee.2011.03.105
Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si
Wensheng WeiSolid State Sciences 12 (5) 789 (2010)
https://doi.org/10.1016/j.solidstatesciences.2010.02.018
182 (2010)
https://doi.org/10.1109/ESSDERC.2010.5618397
Device Physics of Narrow Gap Semiconductors
Junhao Chu and Arden SherDevice Physics of Narrow Gap Semiconductors 203 (2010)
https://doi.org/10.1007/978-1-4419-1040-0_4
Multi-carrier transport properties in p-type ZnO thin films
H.B. Ye, J.F. Kong, W. Pan, W.Z. Shen and B. WangSolid State Communications 149 (39-40) 1628 (2009)
https://doi.org/10.1016/j.ssc.2009.06.030
The hypothesis of charge components of the conductivity of a GaAs molecular beam epitaxy epi-layer
A Wolkenberg and T PrzeslawskiSemiconductor Science and Technology 24 (9) 095009 (2009)
https://doi.org/10.1088/0268-1242/24/9/095009
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs
S.B. Lisesivdin, N. Balkan and E. OzbayMicroelectronics Journal 40 (3) 413 (2009)
https://doi.org/10.1016/j.mejo.2008.06.006
Maximum entropy mobility spectrum analysis of HgCdTe heterostructures
Johan Rothman, Jerome Meilhan, Gwladys Perrais, Jean-Pierre Belle and Olivier GravrandJournal of Electronic Materials 35 (6) 1174 (2006)
https://doi.org/10.1007/s11664-006-0238-2
Conductivity analysis of n-GaAs molecular beam epitaxial layers using multicarrier fitting
A. Wolkenberg, T. Przeslawski, J. Kaniewski, E. Kowalczyk and K. ReginskiJournal of Applied Physics 99 (9) (2006)
https://doi.org/10.1063/1.2193160
Carrier compensation and scattering mechanisms in Si-doped InAsyP1−y layers grown on InP substrates using intermediate InAsyP1−y step-graded buffers
M. K. Hudait, Y. Lin, P. M. Sinha, J. R. Lindemuth and S. A. RingelJournal of Applied Physics 100 (6) (2006)
https://doi.org/10.1063/1.2349358
Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures
J. Antoszewski, L. Faraone, I. Vurgaftman, J. R. Meyer and C. A. HoffmanJournal of Electronic Materials 33 (6) 673 (2004)
https://doi.org/10.1007/s11664-004-0066-1
A method for calculating the conductivity mobility spectrum using multi-carrier fitting
Andrzej Wolkenberg, Tomasz Przesławski, Janusz Kaniewski and Kazimierz ReginskiMaterials Science and Engineering: B 110 (1) 79 (2004)
https://doi.org/10.1016/j.mseb.2004.03.009
Reply to “Comment on ‘Mobility spectrum computational analysis using a maximum entropy approach’ ”
O. Mironov, M. Myronov, S. Kiatgamolchai and V. KantserPhysical Review E 69 (3) 038702 (2004)
https://doi.org/10.1103/PhysRevE.69.038702
Ballistic transport in InSb quantum wells at high temperature
N Goel, S.J Chung, M.B Santos, et al.Physica E: Low-dimensional Systems and Nanostructures 20 (3-4) 251 (2004)
https://doi.org/10.1016/j.physe.2003.08.012
Mobility spectrum computational analysis using a maximum entropy approach
S. Kiatgamolchai, M. Myronov, O. Mironov, et al.Physical Review E 66 (3) 036705 (2002)
https://doi.org/10.1103/PhysRevE.66.036705
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures
M. Myronov, T. Irisawa, O. A. Mironov, et al.Applied Physics Letters 80 (17) 3117 (2002)
https://doi.org/10.1063/1.1473690
Photodetectors and Fiber Optics
A. BURGER, J.-O. NDAP, K. CHATTOPADHYAY and S. MORGANPhotodetectors and Fiber Optics 239 (2001)
https://doi.org/10.1016/B978-0-12-513908-3.50010-5
A matrix formalism for the Hall effect in multicarrier semiconductor systems
J. S. KimJournal of Applied Physics 86 (6) 3187 (1999)
https://doi.org/10.1063/1.371187
Negative magnetoresistance and impurity band conduction in an In[sub 0.53]Ga[sub 0.47]As/InP heterostructure
Z. Dziuba, T. Przesławski, K. Dybko, et al.Journal of Applied Physics 85 (9) 6619 (1999)
https://doi.org/10.1063/1.370170
Improved quantitative mobility spectrum analysis for Hall characterization
I. Vurgaftman, J. R. Meyer, C. A. Hoffman, et al.Journal of Applied Physics 84 (9) 4966 (1998)
https://doi.org/10.1063/1.368741
A matrix formulation of magnetoresistance for an arbitrary J-fold multicarrier semiconductor system via the reduced-conductivity-tensor scheme in the nonquantizing regime
J. S. KimJournal of Applied Physics 84 (1) 292 (1998)
https://doi.org/10.1063/1.368026
Evaluation of III–V multilayer transport parameters using quantitative mobility spectrum analysis
J. Antoszewski, J.M. Dell, L. Faraone, et al.Materials Science and Engineering: B 44 (1-3) 65 (1997)
https://doi.org/10.1016/S0921-5107(96)01808-9
Electrical characterization of subbands in the HgCdTe surface layer
Y. S. Gui, G. Z. Zheng, J. H. Chu, et al.Journal of Applied Physics 82 (10) 5000 (1997)
https://doi.org/10.1063/1.366369
Mobility spectrum approach in the analysis of the electrical conduction of a GaAs layer grown by molecular beam epitaxy
K. Regiński, J. Marczewski, Z. Dziuba and E. GrodzickaJournal of Applied Physics 82 (12) 6102 (1997)
https://doi.org/10.1063/1.366481
Demonstration of Improved Quantitative Mobility Spectrum Analysis (i-QMSA)
I. Vurgaftman, J. R. Meyer, C. A. Hoffman, et al.MRS Proceedings 490 (1997)
https://doi.org/10.1557/PROC-490-245
Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
Z. Dziuba, J. Antoszewski, J. M. Dell, et al.Journal of Applied Physics 82 (6) 2996 (1997)
https://doi.org/10.1063/1.366137
Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors
J. R. Meyer, C. A. Hoffman, J. Antoszewski and L. FaraoneJournal of Applied Physics 81 (2) 709 (1997)
https://doi.org/10.1063/1.364211
Analysis of electrical conduction in epitaxial layer structures using the mobility spectrum technique
Z. DziubaPhysica Status Solidi (a) 153 (2) 445 (1996)
https://doi.org/10.1002/pssa.2211530219
Magneto-transport characterization using quantitative mobility-spectrum analysis
J. Antoszewski, D. J. Seymour, L. Faraone, J. R. Meyer and C. A. HoffmanJournal of Electronic Materials 24 (9) 1255 (1995)
https://doi.org/10.1007/BF02653082
Methods for magnetotransport characterization of IR detector materials
J R Meyer, C A Hoffman, F J Bartoli, et al.Semiconductor Science and Technology 8 (6S) 805 (1993)
https://doi.org/10.1088/0268-1242/8/6S/004
Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements
J. S. Kim, D. G. Seiler and W. F. TsengJournal of Applied Physics 73 (12) 8324 (1993)
https://doi.org/10.1063/1.353424